| 发明名称 |
NANOSTRUCTURE SEMICONDUCTOR LIGHT EMITTING DEVICE |
| 摘要 |
A nanostructure semiconductor light emitting device may include a first conductivity-type semiconductor base layer, a mask layer disposed on the base layer and having a plurality of openings exposing portions of the base layer, a plurality of light emitting nanostructures disposed in the plurality of openings, and a polycrystalline current suppressing layer disposed on the mask layer. At least a portion of the polycrystalline current suppressing layer is disposed below the second conductivity-type semiconductor layer. Each light emitting nanostructure includes a first conductivity-type semiconductor nanocore, an active layer, and a second conductivity-type semiconductor layer. |
| 申请公布号 |
US2015236202(A1) |
申请公布日期 |
2015.08.20 |
| 申请号 |
US201414516470 |
申请日期 |
2014.10.16 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHUN Dae Myung;KIM Jung Sub;LEE Jin Sub;KANG Sam Mook;SEO Yeon Woo;SEONG Han Kyu;Choi Young Jin;HEO Jae Hyeok |
| 分类号 |
H01L33/24;H01L33/62;H01L33/08 |
主分类号 |
H01L33/24 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A nanostructure semiconductor light emitting device, comprising:
a first conductivity-type semiconductor base layer; a mask layer disposed on the base layer and having a plurality of openings exposing portions of the base layer; a plurality of light emitting nanostructures disposed on the base layer, each of the plurality of light emitting nanostructures being disposed through the respective opening of the plurality of openings, each of the plurality of light emitting nanostructures including a first conductivity-type semiconductor nanocore, an active layer and a second conductivity-type semiconductor layer; and a polycrystalline current suppressing layer disposed on the mask layer, wherein at least a portion of the polycrystalline current suppressing layer is disposed below the second conductivity-type semiconductor layer. |
| 地址 |
Suwon-si KR |
