发明名称 |
EXTENDED PRECURSOR GAS INJECTION METHOD |
摘要 |
Embodiments of the present disclosure relate to delivering precursors through a linear plasma source in a processing chamber in in-line processing tools. In one embodiment of the present disclosure, a first processing gas is introduced closer to a substrate plane, where processing, such as depositing a dielectric film, is meant to occur, than to a nozzle outlet, where a second processing gas is introduced. |
申请公布号 |
WO2015122977(A1) |
申请公布日期 |
2015.08.20 |
申请号 |
WO2015US10876 |
申请日期 |
2015.01.09 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
HAMMOND, EDWARD P., IV;TANAKA, TSUTOMU;RUHLAND, ERIC;LANE, CHRISTOPHER T.;PONNEKANTI, HARI K. |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|