| 发明名称 |
PATTERN DENSITY-DEPENDENT MISMATCH MODELING FLOW |
| 摘要 |
In some embodiments, in a method, a layout of a circuit is received. A netlist with indicated pattern density (PD)-dependent mismatch elements associated with different PDs, respectively, is generated using the layout. A simulation on the netlist is performed such that when the PD-dependent mismatch elements are modeled in the simulation, corresponding model parameters of the PD-dependent mismatch elements are generated using variation distributions with different spreads. |
| 申请公布号 |
US2015234964(A1) |
申请公布日期 |
2015.08.20 |
| 申请号 |
US201414182852 |
申请日期 |
2014.02.18 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. |
发明人 |
FU CHUNG-MIN;LO WAN-YU;YANG SHIH-CHENG;LIN CHUNG-KAI;PENG YUNG-CHOW |
| 分类号 |
G06F17/50 |
主分类号 |
G06F17/50 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method, performed by at least one processor, comprising:
receiving, by the at least one processor, a layout of a circuit; generating, by the at least one processor using the layout, a netlist with indicated pattern density (PD)-dependent mismatch elements associated with different PDs, respectively; and performing, by the at least one processor, a simulation on the netlist such that when the PD-dependent mismatch elements are modeled in the simulation, corresponding model parameters of the PD-dependent mismatch elements are generated using variation distributions with different spreads. |
| 地址 |
HSINCHU TW |
