发明名称 |
MARK FORMATION METHOD AND DEVICE MANUFACTURING METHOD |
摘要 |
A mark forming method includes: a step of forming, on a device layer of a wafer, an intermediate layer to which a polymer layer containing a block copolymer is adherable, the device layer including a shot area and a scribe line area; a step of removing a portion, of the intermediate layer, formed in the scribe line area; a step of exposing an image of a mark on the scribe line area and forming, based on the image of the mark, a mark including recessed portion; and a step of applying the polymer layer containing the block copolymer on the device layer of the wafer. When a circuit pattern is forced by using the self-assembly of the block copolymer, it is possible to form the mark simultaneously with the formation of the circuit pattern. |
申请公布号 |
US2015234279(A1) |
申请公布日期 |
2015.08.20 |
申请号 |
US201514590488 |
申请日期 |
2015.01.06 |
申请人 |
NIKON CORPORATION |
发明人 |
FUJIWARA Tomoharu |
分类号 |
G03F7/20;G03F7/16;H01L21/027;H01L23/544;H01L21/02 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
1. A mark forming method comprising:
forming, oil a substrate, an intermediate layer to which a polymer layer containing a block copolymer is adherable; removing a portion of the intermediate layer formed on the substrate; forming an alignment mark in an area of the substrate, the area being an area from which the portion of the intermediate layer has been removed; and forming a device pattern by applying the polymer layer containing the block copolymer on the intermediate layer, wherein the alignment mark is formed on the substrate not via the intermediate layer, and the polymer layer is formed on the substrate via the intermediate layer. |
地址 |
Tokyo JP |