METHOD OF MANUFACTURING NON-VOLATILE MEMORY DEVICE

摘要

A method for manufacturing a non-volatile memory includes depositing a first conductive film and a protective film on a substrate including a logic area and a cell area, patterning the protective film, depositing a hard mask layer on the first conductive film and the patterned protective film to pattern the hard mask layer, using the patterned hard mask layer to form a logic gate on the logic area, exposing a surface of the first conductive film in the cell area and forming a control gate on the cell area.

主权项

1. A method of manufacturing a non-volatile memory device, comprising:
providing a substrate comprising a logic area and a cell area; forming a floating gate on the cell area; depositing a first conductive film and a protective film on the substrate; patterning the protective film; depositing a hard mask layer on the first conductive film and the patterned protective film; patterning the hard mask layer; forming a logic gate on the logic area using the patterned hard mask layer; exposing a surface of the first conductive film in the cell area; and forming a control gate on the cell area.