| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that is highly integrated and has improved functions; and provide an imaging apparatus.SOLUTION: A semiconductor device according to an embodiment comprises: a substrate including a function element; and a thin-film transistor provided on the substrate. The thin-film transistor includes: an oxynitride semiconductor layer that includes a first portion, a second portion separated from the first portion, and a third portion provided between the first portion and the second portion; a first conductive layer that is electrically connected to the first portion; a second conductive layer that is electrically connected to the second portion; a gate electrode separated from the third portion; and a first insulation layer provided between the third portion and the gate electrode. The oxynitride semiconductor layer contains indium, gallium, zinc, and nitrogen. The content of nitrogen is 2 atomic % or less, and the content of gallium is greater than the content of nitrogen. |
