发明名称 |
NON-VOLATILE MEMORY ARRAY AND METHOD OF USING SAME FOR FRACTIONAL WORD PROGRAMMING |
摘要 |
A non-volatile memory device that includes N planes of non-volatile memory cells (where N is an integer greater than 1). Each plane of non-volatile memory cells includes a plurality of memory cells configured in rows and columns. Each of the N planes includes gate lines that extend across the rows of the memory cells therein but do not extend to others of the N planes of non-volatile memory cells. A controller is configured to divide each of a plurality of words of data into N fractional-words, and program each of the N fractional-words of each word of data into a different one of the N planes of non-volatile memory cells. The controller uses a programming current and a program time period for the programming, and can be configured to vary the programming current by a factor and inversely vary the program time period by the factor. |
申请公布号 |
EP2907137(A1) |
申请公布日期 |
2015.08.19 |
申请号 |
EP20130780469 |
申请日期 |
2013.10.09 |
申请人 |
SILICON STORAGE TECHNOLOGY INC. |
发明人 |
TRAN, HIEU, VAN;LY, ANH;VU, THUAN;NGUYEN, HUNG, QUOC |
分类号 |
G11C16/10;G11C5/14;G11C8/08;G11C11/56;G11C16/08 |
主分类号 |
G11C16/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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