METHOD OF FORMING SEMICONDUCTOR DEVICE BY USING DOUBLE PATTERNING TECHNOLOGY

摘要

Provided is a method for forming a semiconductor device, comprising the steps of: forming an arrangement of line-type patterns repeatedly disposed by a double patterning technology on a semiconductor substrate; a spacer pattern crossing at least one of the line-type patterns by spacer patterning technology; and selectively removing a line-type pattern portion overlapped with the spacer pattern to separate a pad-type pattern separated from the line-type pattern.