| 摘要 |
<p>Affords a method of manufacturing a composite substrate in which the joining strength between a first substrate composed of a nitride compound semiconductor and a second substrate is high. A composite-substrate manufacturing method of the present invention includes: a step of carrying out implantation of ions through a surface of a bulk substrate composed of the nitride compound semiconductor; a step of obtaining a bonded substrate by bonding the bulk substrate and the second substrate together; a step of elevating the temperature of the bonded substrate to a first temperature; a step of sustaining the first temperature for a fixed time; and a step of producing a composite substrate by severing, in such as way as to leave the first substrate as a portion of the bulk substrate atop the second substrate, the remaining portion of the bulk substrate from the bonded substrate; characterized in that letting the first temperature be T 1 °C, the thermal expansion coefficient of the first substrate be A × 10 -6 /°C, and the thermal expansion coefficient of the second substrate be B × 10 -6 /°C, the following formula (I) is satisfied.</p> |
