发明名称 Power semiconductor package with non-contiguous, multi-section conductive carrier
摘要 In one implementation, a power semiconductor package includes a non-contiguous, multi-section conductive carrier. A control transistor with a control transistor terminal is coupled to a first section of the multi-section conductive carrier, while a sync transistor with a sync transistor terminal is coupled to a second section of the multi-section conductive carrier. The first and second sections of the multi-section conductive carrier sink heat generated by the control and sync transistors. The first and second sections of the multi-section conductive carrier are electrically connected only through a mounting surface attached to the power semiconductor package. Another implementation of the power semiconductor package includes a driver IC coupled to a third section of the multi-section conductive carrier. A method for fabricating the power semiconductor package is also disclosed. The power semiconductor package according to the present disclosure results in effective thermal protection, current carrying capability, and a relatively small size.
申请公布号 US9111776(B2) 申请公布日期 2015.08.18
申请号 US201414488747 申请日期 2014.09.17
申请人 International Rectifier Corporation 发明人 Cho Eung San
分类号 H01L29/76;H01L25/07;H01L23/00;H01L23/31;H01L21/48;H01L21/56;H01L25/11;H01L25/16;H01L23/492;H01L23/495 主分类号 H01L29/76
代理机构 Farjami & Farjami LLP 代理人 Farjami & Farjami LLP
主权项 1. A power semiconductor package comprising: a non-contiguous, multi-section conductive carrier; a control transistor with a control transistor terminal coupled to a first section of said multi-section conductive carrier; a sync transistor with a sync transistor terminal coupled to a second section of said multi-section conductive carrier; said first and second sections of said multi-section conductive carrier sinking heat generated by said control and sync transistors; said first and second sections of said multi-section conductive carrier being electrically connected only through a mounting surface attached to said power semiconductor package.
地址 El Segundo CA US