Semiconductor device

摘要

According to one embodiment, a semiconductor device includes: a first region including: a first semiconductor layer; a first semiconductor region; a second semiconductor region; a third semiconductor region having higher impurity concentration than the first semiconductor region; a first electrode; a second electrode; an insulating film; a third electrode; a fourth electrode, a second region including a pad electrode, and the third region including: the first semiconductor layer; the first semiconductor region; a third semiconductor region; the first electrode; the second electrode; and a first insulating layer.

主权项

1. A semiconductor device comprising:
a first region; and a second region being adjacent to the first region, the first region including:
a first semiconductor layer of a first conductivity type;a first semiconductor region of a second conductivity type provided on the first semiconductor layer;a second semiconductor region of the first conductivity type provided on the first semiconductor region;a first electrode electrically connected to the second semiconductor region;a second electrode electrically connected to the first semiconductor layer;a third electrode facing the first semiconductor layer, the first semiconductor region, and the second semiconductor region via an insulating film; anda fourth electrode facing the first semiconductor layer and the third electrode via the insulating film, the second region including:
the first semiconductor layer of a first conductivity type;the first semiconductor region of a second conductivity type provided on the first semiconductor layer;the fourth electrode facing the first semiconductor layer and the first semiconductor region via the insulating film; anda pad electrode provided on the first semiconductor layer, and electrically connected to the third electrode.