| 发明名称 | Insulated gate bipolar transistor including emitter short regions | ||
| 摘要 | A semiconductor device includes an IGBT having a semiconductor body including a transistor cell array in a first area. A junction termination structure is in a second area surrounding the transistor cell array at a first side of the semiconductor body. An emitter region of a first conductivity type is at a second side of the semiconductor body opposite the first side. The device further includes a diode. One of the diode anode and cathode includes the body region. The other one of the anode and the cathode includes a plurality of distinct first emitter short regions of a second conductivity type at the second side facing the transistor cell array, and at least one second emitter short region of the second conductivity type at the second side facing the junction termination structure. The at least one second emitter short region is distinct from the first emitter short regions. | ||
| 申请公布号 | US9111989(B2) | 申请公布日期 | 2015.08.18 |
| 申请号 | US201313850798 | 申请日期 | 2013.03.26 |
| 申请人 | Infineon Technologies Austria AG | 发明人 | Voss Stephan;Griebl Erich;Breymesser Alexander |
| 分类号 | H01L29/739;H01L29/06;H01L29/74;H01L29/08;H01L29/10;H01L29/70 | 主分类号 | H01L29/739 |
| 代理机构 | Murphy, Bilak & Homiller, PLLC | 代理人 | Murphy, Bilak & Homiller, PLLC |
| 主权项 | 1. A semiconductor device, comprising: an IGBT comprising: a semiconductor body including a transistor cell array in a first area; a junction termination structure in a second area surrounding the transistor cell array at a first side of the semiconductor body; an emitter region of a first conductivity type at a second side of the semiconductor body opposite the first side; and a diode comprising an anode and a cathode, wherein either: the anode includes a body region and the cathode includes a plurality of distinct first emitter short regions of a second conductivity type at the second side facing the transistor cell array and at least one second emitter short region of the second conductivity type at the second side facing the junction termination structure; or the cathode includes the body region and the anode includes the distinct first emitter short regions and the at least one second emitter short region, wherein the at least one second emitter short region is distinct from the first emitter short regions, wherein a first ratio between an area of the plurality of distinct first emitter short regions and the first area is smaller than a second ratio between an area of the at least one second emitter short region and the second area. | ||
| 地址 | Villach AT | ||