METHOD FOR MANUFACTURING SILICON CARBIDE MOSFET

摘要

The present invention relates to a method for manufacturing a silicon carbide MOSFET, comprising the steps of: forming an epitaxial layer on a silicon carbide substrate; forming a first well area having a first doping concentration at a part of the epitaxial layer; forming a second well area having a second doping concentration at the other part of the epitaxial layer; forming a doping area at an upper portion in the first well area; forming a gate oxide film on the second well area and the epitaxial layer; forming an upper metal film on each of the gate oxide film and the doping area; and forming a lower metal film on a rear face of the silicon carbide substrate. According to the present invention, it is possible to simultaneously improve breakdown voltage and a threshold voltage of the silicon carbide MOSFET by using a dual-structure well area having doping concentrations that are different from each other.