UV radiation recovery of image sensor

摘要

A method of an embodiment comprises forming a dielectric layer on a first side of an image sensor substrate, and exposing the dielectric layer to ultraviolet (UV) radiation. The image sensor substrate comprises a photo diode. A structure of an embodiment comprises a substrate and a charge-less dielectric. The substrate comprises a photo diode. The charge-less dielectric layer is on a first side of the substrate, and a total charge of the charge-less dielectric results in an average voltage drop of less than 0.2 V across the charge-less dielectric layer.

主权项

1. A method comprising:
forming a dielectric layer on a first side of an image sensor substrate, the image sensor substrate comprising a photo diode; bonding the first side of the image sensor substrate to a carrier substrate, the dielectric layer being disposed between the image sensor substrate and the carrier substrate; and after the bonding, exposing the dielectric layer to broad spectrum ultraviolet (UV) radiation, wherein no photoresist is over the dielectric layer during the exposing the dielectric layer to the broad spectrum UV radiation.