| 发明名称 | Integrated circuit devices and fabrication techniques | ||
| 摘要 | Integrated circuit devices and fabrication techniques. A semiconductor device fabrication method may include doping, in a same processing step, first and second portions of a substrate of an integrated circuit. The first portion corresponds to a doped region of a semiconductor device. The second portion corresponds to a via contact. The method may further include, after the doping, forming the gate of the semiconductor device. | ||
| 申请公布号 | US9111801(B2) | 申请公布日期 | 2015.08.18 |
| 申请号 | US201313856985 | 申请日期 | 2013.04.04 |
| 申请人 | STMicroelectronics, Inc. | 发明人 | Zhang John H. |
| 分类号 | H01L21/04;H01L27/12;H01L29/66;H01L21/84;H01L27/11 | 主分类号 | H01L21/04 |
| 代理机构 | Seed IP Law Group PLLC | 代理人 | Seed IP Law Group PLLC |
| 主权项 | 1. A method, comprising: doping, in a same processing step, first and second portions of a substrate of an integrated circuit, the first portion corresponding to a doped region of a semiconductor device, and the second portion corresponding to a via contact; and after the doping, forming the gate of the semiconductor device; and after the doping, isolating the first portion of the substrate from a third portion of the substrate corresponding to a doped region of a second semiconductor device. | ||
| 地址 | Coppell TX US | ||