Light emitting diode and method of fabricating the same

摘要

Provided are a light emitting diode (LED) and a method of fabricating the same. The LED includes a unit chip. The unit chip includes a substrate, and a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer which are sequentially stacked on the substrate. A concavo-convex structure having the shape of irregular vertical lines is disposed in a side surface of the unit chip.

主权项

1. A light emitting diode (LED), comprising:
a unit chip including a substrate and a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer which are sequentially stacked on the substrate; a doped region formed in the side surface of the unit chip; and an extension electrode disposed on the side surface of the unit chip, and electrically connected to the first conductivity-type semiconductor layer, wherein: a side surface of the unit chip includes a concavo-convex structure having the shape of irregular vertical lines; and the doped region has a higher conductivity than an undoped region.