Semiconductor device and method for producing the same

摘要

Provided are a semiconductor device having a high breakdown voltage and attaining the restraint of the action of a parasite bipolar transistor, and a method for producing the device. A high-breakdown-voltage p-channel-type transistor included in the semiconductor device has a first n-type semiconductor layer arranged in a semiconductor substrate and at a main-surface-side (upside) of a p-type region in the semiconductor substrate, and a local n-type buried region arranged just below a first p-type dopant region to contact the first n-type semiconductor layer.

主权项

1. A semiconductor device comprising a semiconductor substrate having a main surface and further having, in an internal region thereof, a p-type region, and a high-breakdown-voltage p-channel-type transistor in the semiconductor substrate,
wherein the high-breakdown-voltage p-channel-type transistor comprises a first n-type semiconductor layer arranged in the semiconductor substrate and at a side of the p-type region closer to the main-surface, a first p-type dopant region formed over the p-type region and in the main surface to form a drain electrode, a second p-type dopant region formed over the p-type region and in the main surface to form a source electrode, and a local n-type buried region arranged below the first p-type dopant region to contact the first n-type semiconductor layer, wherein the first p-type dopant region includes a p-type dopant ions region and a p-type drift region directly surrounding the p-type dopant ions region.