发明名称 Infrared reflection/absorption layer for reducing ghost image of infrared reflection noise and image sensor using the same
摘要 An image sensor includes a photosensing element for receiving infrared (IR) radiation and detecting the IR radiation and generating an electrical signal indicative of the IR radiation. A redistribution layer (RDL) is disposed under the photosensing element, the RDL comprising pattern of conductors for receiving the electrical signal. An IR reflection layer, an IR absorption layer or an isolation layer is disposed between the photosensing element and the RDL. The IR reflection layer, IR absorption layer or isolation layer provides a barrier to IR radiation such that the IR radiation does not impinge upon the RDL. As a result, a ghost image of the RDL is not generated, resulting in reduced noise and improved sensitivity and performance of the image sensor.
申请公布号 US9111832(B2) 申请公布日期 2015.08.18
申请号 US201213662640 申请日期 2012.10.29
申请人 OmniVision Technologies,Inc. 发明人 Lin Wei-Feng;Chien Yeh-An;Fan Chun-Sheng
分类号 H01L27/146 主分类号 H01L27/146
代理机构 Lathrop & Gage LLP 代理人 Lathrop & Gage LLP
主权项 1. An image sensor, comprising: a photosensing element for receiving infrared (IR) radiation and detecting the IR radiation and generating an electrical signal indicative of the IR radiation; a redistribution layer (RDL) under the photosensing element, the RDL comprising a pattern of conductors for receiving the electrical signal; and an IR absorption layer between the photosensing element and the RDL, said IR absorption layer absorbing the IR radiation such that a substantial portion of the IR radiation does not impinge upon the RDL.
地址 Santa Clara CA US