Non-volatile memory device with TSI/TSV application

摘要

Memory devices and methods for forming the device are disclosed. The device includes a substrate having an array surface and a non-array surface and a memory array having a plurality of memory cells interconnected by first conductors in a first direction and second conductors in a second direction. The memory array is disposed on the array surface of the substrate. The device further includes through silicon via (TSV) contacts disposed in the substrate. The TSV contacts extend from the array surface to the non-array surface, enabling electrical connections to the array from the non-array surface.

主权项

1. A device comprising:
a semiconductor substrate having an array surface and a non-array surface; a memory dielectric layer disposed on and contacts the array surface of the substrate; a memory array having a plurality of memory cells interconnected by first conductors in a first direction and second conductors in a second direction, the memory array is disposed in the memory dielectric layer which is disposed on and contacts the array surface of the substrate; through silicon via (TSV) contacts disposed in the substrate, the TSV contacts extend from the array surface to the non-array surface, the TSV contacts enable electrical connections to the array surface from the non-array surface; and a dielectric layer disposed on and contacts the non-array surface of the substrate.