Method, system and device for recessed contact in memory array

摘要

Embodiments disclosed herein may relate to forming a contact region for an interconnect between a selector transistor and a word-line electrode in a memory device.

主权项

1. A memory device, comprising:
an array of memory cells each comprising a selector transistor, the array including a word-line contact region in a base component in substantially direct contact with an electrically conductive interconnect electrically coupled to a word-line electrode, the word-line contact region positioned between memory cells of the array, wherein the word-line contact region has a width between a pair of selector transistors of the array that is greater than two times a width of each of the selector transistors.