Rectified switching of two-terminal memory via real time filament formation

摘要

Providing for rectified-switching of a two-terminal solid state memory cell is described herein. By way of example, the subject disclosure provides a solid state device exhibiting rectified resistive switching characteristics that can be fabricated with semiconductor fabrication techniques. The solid state device can comprise a metal ion layer adjacent to an electrically resistive diffusion layer, which is at least in part permeable to conductive ions of the metal ion layer. A pair of electrodes can be placed, respectively, on opposite sides of the adjacent ion layer and electrically resistive diffusion layer to facilitate operating on the two-terminal solid state memory cell. In operation, a program voltage induces conductive ions to form a semi-stable conductive filament within the diffusion layer, which partially deforms in response to reduction in the program voltage. A suitable rectifier voltage re-establishes electrical conductivity, with much lower electrical conductivity for voltages lower than the rectifier voltage.

主权项

1. A solid state memory cell, comprising:
a first electrical conductor that forms a layer of the solid state memory cell; an electrically resistive diffusive medium that forms a second layer of the solid state memory cell; and a second electrical conductor that forms a third layer of the solid state memory cell; wherein:
ions of the first electrical conductor are at least in part mobile within the electrically resistive diffusive medium,a conductive path is formed through the diffusive medium between the first electrical conductor and the second electrical conductor in response to application of an electric field across the diffusive medium, andthe conductive path partially diffuses within the diffusive medium forming a diffused path in response to a decrease in magnitude of the electric field, the diffused path having an electrical resistance substantially higher than that of the conductive path.