Semiconductor structure and method for forming the same

摘要

Various embodiments provide semiconductor structures and methods for forming the same. In an exemplary method, a substrate can be provided. The substrate can have a plurality of isolation structures. A top surface of the plurality of isolation structures can be higher than a surface of the substrate. A device layer can be formed on the substrate and on the plurality of isolation structures. The device layer can be polished using a polishing process, such that the top surface of the plurality of isolation structures are exposed, with residue remaining on the device layer and on the plurality of isolation structures. The residue can be removed from the device layer and from the plurality of isolation structures using a non-polishing-removal process, such that the top surface of the plurality of isolation structures and a top surface of the device layer are substantially leveled and smooth.

主权项

1. A method for forming a semiconductor structure, comprising:
providing a substrate having a plurality of isolation structures, a top surface of the plurality of isolation structures being higher than a surface of the substrate; forming a device layer on the substrate and on the plurality of isolation structures; polishing the device layer using a polishing process, such that the top surface of the plurality of isolation structures are exposed, with residue remaining on the device layer and on the plurality of isolation structures; and removing the residue from the device layer and from the plurality of isolation structures using a non-polishing-removal process, such that the top surface of the plurality of isolation structures and a top surface of the device layer are substantially leveled and smooth, wherein the non-polishing-removal process reduces a thickness of the device layer and a thickness of the plurality of isolation structures by a thickness amount ranging from about 30 Å to about 80 Å.