| 摘要 |
<p>A semiconductor device comprises a power generation part generating a fuse power driven at a target level of an internal voltage, while the fuse power is generated at a level lower than the target level of the internal voltage by a variable level during a section from a point entering into a deep power down mode to a point that the internal voltage reaches a preset level after escaping from the deep power down mode; and a redundancy signal generation part generating a redundancy signal by latching fuse data in response to a fuse reset signal and fuse set signal by receiving the fuse power.</p> |
