| 摘要 |
一种氮化铝铟薄膜的成长方法包含多个步骤：设置一矽基板于一反应腔体中；提供多个反应气体于反应腔体中，其中多个反应气体包含铝前驱物、铟前驱物以及含氮气体；动态调整多个反应气体的流量并藉由一晶体成长步骤直接形成一氮化铝铟层于该矽基板上。藉由直接形成氮化铝铟层在矽基板上，除了提高晶格匹配性，降低残留应力，提高薄膜品质，还简化了制程且降低成本。; secondly, providing multiple reaction gases in the reaction chamber, wherein the reaction gases include aluminum precursors, indium precursors and nitrogen-containing gases; finally, dynamically adjusting flow rate of the reaction gases and growing an AlInN layer on the silicon substrate via a crystal growth process. By directly forming an AlInN layer on the silicon substrate, lattice constant matching is increased, residual thermal stress is reduced and film quality is improved. In addition, fabrication process is simplified and thus cost is reduced. |
