| 摘要 |
A power module (20) provided with: a first metal circuit pattern (3); a semiconductor device (1) that is placed on the first metal circuit pattern (3); a lead frame (15) that is electrically connected to the semiconductor device (1); and a stress buffer layer (14) that is placed on the upper surface of the semiconductor device (1) and can buffer the thermal expansion coefficient difference between the semiconductor device (1) and the lead frame (15). The lead frame (15) is connected to the semiconductor device (1) via the stress buffer layer (14), the thermal expansion coefficient of the stress buffer layer (14) is equal to or less than the thermal expansion coefficient of the lead frame (15), and the cross-sectional shape of the stress buffer layer (14) is an L-shape. The provided power module and production method for the same suppress welding variations without damaging the semiconductor device, improve yield, and due to the structure of the lead frame, enable minimization, increased current capacity, and cost reduction. |
