发明名称 PHOTOLITHOGRAPHY METHOD AND SYSTEM BASED ON HIGH STEP SLOPE
摘要 A photolithography method and system based on a high step slope are provided. The method includes: S1, manufacturing a sacrificial layer with a high step slope on a substrate; S2, adopting a spin-on PR coating process to cover the sacrificial layer with a photoresist layer to form a photolithographic layer; S3, forming a mask pattern and a compensation pattern on a mask; and S4, performing photolithography processes, by a photolithography machine, on the photolithographic layer. By forming a slope-top compensation pattern and a slope compensation pattern on a mask to perform photolithography on the substrate of a sacrificial layer, a relatively wide compensation pattern is set in a part of the top of the slope with a small thickness, thereby compensating the overexposure at the top of the slope, reducing the error in the photolithographic pattern, and improving the precision of photolithography of the high step slope.
申请公布号 US2015227048(A1) 申请公布日期 2015.08.13
申请号 US201314435945 申请日期 2013.09.03
申请人 CSMC TECHNOLOGIES FAB1 CO., LTD. 发明人 Su Jiale
分类号 G03F7/20 主分类号 G03F7/20
代理机构 代理人
主权项 1. A photolithography method based on a high step slope, comprising: S1, manufacturing a sacrificial layer having a high step slope on a substrate; S2, coating a photoresist layer on the sacrificial layer by performing a spin-on PR coating process to form a photolithographic layer; S3, forming a mask pattern and a compensation pattern on a mask, wherein the mask pattern is a rectangular across the top of the slope, the slope, and the bottom of the slope, the compensation pattern comprises a slope-top compensation pattern and a slope compensation pattern, the slope-top compensation pattern is a rectangular corresponding to the top of the slope having a length equal to a width of the slope, and a width greater than a width of the mask pattern, the slope compensation pattern comprises a plurality of triangles corresponding to the slope adjacent to the mask pattern and the slope-top compensation pattern; S4, performing one or more photolithography processes, by a photolithography machine, to the photolithographic layer using the mask.
地址 Jiangsu CN