发明名称 |
PHOTOLITHOGRAPHY METHOD AND SYSTEM BASED ON HIGH STEP SLOPE |
摘要 |
A photolithography method and system based on a high step slope are provided. The method includes: S1, manufacturing a sacrificial layer with a high step slope on a substrate; S2, adopting a spin-on PR coating process to cover the sacrificial layer with a photoresist layer to form a photolithographic layer; S3, forming a mask pattern and a compensation pattern on a mask; and S4, performing photolithography processes, by a photolithography machine, on the photolithographic layer. By forming a slope-top compensation pattern and a slope compensation pattern on a mask to perform photolithography on the substrate of a sacrificial layer, a relatively wide compensation pattern is set in a part of the top of the slope with a small thickness, thereby compensating the overexposure at the top of the slope, reducing the error in the photolithographic pattern, and improving the precision of photolithography of the high step slope. |
申请公布号 |
US2015227048(A1) |
申请公布日期 |
2015.08.13 |
申请号 |
US201314435945 |
申请日期 |
2013.09.03 |
申请人 |
CSMC TECHNOLOGIES FAB1 CO., LTD. |
发明人 |
Su Jiale |
分类号 |
G03F7/20 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
1. A photolithography method based on a high step slope, comprising:
S1, manufacturing a sacrificial layer having a high step slope on a substrate; S2, coating a photoresist layer on the sacrificial layer by performing a spin-on PR coating process to form a photolithographic layer; S3, forming a mask pattern and a compensation pattern on a mask, wherein the mask pattern is a rectangular across the top of the slope, the slope, and the bottom of the slope, the compensation pattern comprises a slope-top compensation pattern and a slope compensation pattern, the slope-top compensation pattern is a rectangular corresponding to the top of the slope having a length equal to a width of the slope, and a width greater than a width of the mask pattern, the slope compensation pattern comprises a plurality of triangles corresponding to the slope adjacent to the mask pattern and the slope-top compensation pattern; S4, performing one or more photolithography processes, by a photolithography machine, to the photolithographic layer using the mask. |
地址 |
Jiangsu CN |