RESISTIVE RANDOM ACCESS MEMORY

摘要

A resistive random access memory including a first electrode, a dielectric layer, at least a first nanostructure and a second electrode is provided. The dielectric layer is disposed on the first electrode. The first nanostructure is disposed between the first electrode and the dielectric layer and includes a plurality of first cluster-type-type metal nanoparticles and a plurality of first covering-type metal nanoparticles. The first cluster-type-type metal nanoparticles are disposed on the first electrode. The first covering-type metal nanoparticles covers the first cluster-type-type metal nanoparticles, wherein a diffusion coefficient of the first cluster-type-type metal nanoparticles is larger than a diffusion coefficient of the first covering-type metal nanoparticles. The second electrode is disposed on the dielectric layer.

主权项

1. A resistive random access memory, comprising:
a first electrode; a dielectric layer, disposed on the first electrode; at least a first nanostructure, disposed between the first electrode and the electrode layer, and the first nanostructure comprising:
a plurality of first cluster-type metal nanoparticles, disposed on the first electrode; anda plurality of first covering-type metal nanoparticles, covering the plurality of first cluster-type metal nanoparticles, wherein a diffusion coefficient of the plurality of first cluster-type metal nanoparticles is greater than a diffusion coefficient of the plurality of first covering-type metal nanoparticles; and a second electrode disposed on the dielectric layer.