Semiconductor Devices, Methods of Manufacture Thereof, and Methods of Manufacturing Capacitors

摘要

Semiconductor devices, methods of manufacture thereof, and methods of manufacturing capacitors are disclosed. In an embodiment, a method of manufacturing a capacitor includes: etching a trench in a workpiece. The trench may extend into the workpiece from a major surface of the workpiece. The method further includes lining the trench with a bottom electrode material and lining the bottom electrode material in the trench with a dielectric material. The dielectric material may have edges proximate the major surface of the workpiece. The method further includes forming a top electrode material over the dielectric material in the trench, and etching away a portion of the bottom electrode material and a portion of the top electrode material proximate the edges of the dielectric material.

主权项

1. A method of manufacturing a capacitor, the method comprising:
etching a trench in a workpiece, the trench extending into the workpiece from a major surface of the workpiece; lining the trench with a bottom electrode material; lining the bottom electrode material in the trench with a dielectric material, the dielectric material having edges proximate the major surface of the workpiece; forming a top electrode material over the dielectric material in the trench, the top electrode material filling the trench; and etching away a portion of the bottom electrode material and a portion of the top electrode material proximate the edges of the dielectric material.