| 摘要 |
PROBLEM TO BE SOLVED: To improve the uniformity of etching.SOLUTION: A device manufacturing apparatus according to one embodiment includes: a substrate holding part 4 which holds a substrate 1000 provided with a processed layer 1X; an ion source 2 including an anode 22 in a housing 29, a cathode 21 at the exterior of the housing 29, and an opening part 299 which is provided at one end of the housing 29 so that the anode 21 is exposed, the ion source 2 used to generate an ion beam; and a first structure 6 which is provided between the ion source 2 and the substrate holding part 4 separating from the opening part 299 of the ion source 2 and has a through hole 69 through which the ion beam passes. The first structure 6 includes a conductor, and an opening size of the through hole 69 is larger than or equal to an opening size of the opening part 299. |
