发明名称 |
AF-MODE STO WITH NEGATIVE HK SPIN POLARIZATION LAYER |
摘要 |
The embodiments disclosed generally relate to an STO structure for a magnetic head. The STO structure has an FGL having a greater thickness than the SPL. The SPL may have multiple layers. In one embodiment, a MAMR head comprises a main pole; a trailing shield; and an STO coupled between the main pole and the trailing shield. The STO includes: a first magnetic layer having a first thickness; a non-magnetic spacer layer coupled to the first magnetic layer; and a second magnetic layer having a second thickness and coupled to the non-magnetic spacer layer, wherein the first thickness is greater than the second thickness, wherein a current is charged from the first magnetic layer to the second magnetic layer, and wherein a vertical magnetic anisotropy field of the second magnetic film is less than 0 kOe. |
申请公布号 |
US2015228295(A1) |
申请公布日期 |
2015.08.13 |
申请号 |
US201414179358 |
申请日期 |
2014.02.12 |
申请人 |
HGST Netherlands B.V. |
发明人 |
SHIIMOTO Masato;IGARASHI Masukaza;NAGASAKA Keiichi;SATO Yo |
分类号 |
G11B5/35 |
主分类号 |
G11B5/35 |
代理机构 |
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代理人 |
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主权项 |
1. A MAMR head, comprising:
a main pole; a trailing shield; and an STO coupled between the main pole and the trailing shield, wherein the STO includes:
a first magnetic layer having a first thickness;a non-magnetic spacer layer coupled to the first magnetic layer; anda second magnetic layer having a second thickness and coupled to the non-magnetic spacer layer, wherein the first thickness is greater than the second thickness, wherein a current is charged from the first magnetic layer to the second magnetic layer, and wherein a vertical magnetic anisotropy field of the second magnetic film is less than 0 kOe. |
地址 |
Amsterdam NL |