| 摘要 |
PROBLEM TO BE SOLVED: To reduce variation in electric characteristics by using an oxide semiconductor film including In, Ga, and Zn for an inverted staggered thin film transistor, since, in an active matrix display device, electric characteristics of a thin film transistor constituting a circuit are important, and performance of the display device depends on the electric characteristics.SOLUTION: Three layers of a gate insulating film, an oxide semiconductor layer and a channel protective layer are successively formed by a sputtering method without being exposed to air. Further, in the oxide semiconductor layer, the thickness of a region overlapping with the channel protective film is larger than that of a region in contact with a conductive film. |
