| 发明名称 |
HIGH-PASS FILTER CIRCUIT AND BAND-PASS FILTER CIRCUIT |
| 摘要 |
Two types of high-pass filter circuit and a band-pass filter circuit are provided. Both types of high-pass filter circuit include a capacitor configured to input an input signal, a resistor connected between an output terminal of the capacitor and a prescribed bias voltage, and a signal output circuit connected to the output terminal of the capacitor and configured to buffer-amplify the input signal for output. In one of the two types of high-pass filter circuits, the resistor is formed on an SOI semiconductor substrate and includes two PN junction diodes that are inversely connected to each other in parallel. In the other one of the high-pass filter circuits, the resistor is formed on an SOI semiconductor substrate and includes two MOS transistors that are inversely connected to each other in parallel. |
| 申请公布号 |
US2015229293(A1) |
申请公布日期 |
2015.08.13 |
| 申请号 |
US201514604851 |
申请日期 |
2015.01.26 |
| 申请人 |
NAGAHISA Takeshi;NAKATANI Yasukazu |
发明人 |
NAGAHISA Takeshi;NAKATANI Yasukazu |
| 分类号 |
H03H11/12 |
主分类号 |
H03H11/12 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A high-pass filter circuit comprising:
a capacitor configured to input an input signal; a resistor connected between an output terminal of the capacitor and a prescribed bias voltage; and a signal output circuit connected to the output terminal of the capacitor and configured to buffer-amplify the input signal for output, wherein the resistor is formed on an SOI semiconductor substrate and includes two PN junction diodes that are inversely connected to each other in parallel, and the two PN junction diodes have an approximately zero potential difference between an anode and cathode of the PN junction diodes. |
| 地址 |
Osaka JP |
