LOW TEMPERATURE DEPOSITION FOR SILICON-BASED CONDUCTIVE FILM

摘要

Providing for low temperature deposition of silicon-based electrical conductor for solid state memory is described herein. In various disclosed embodiments, the silicon-based conductor can form an electrode of a memory cell, an interconnect between conductive components of an electronic device, a conductive via, a wire, and so forth. Moreover, the silicon-based electrical conductor can be formed as part of a monolithic process incorporating complementary metal oxide semiconductor (CMOS) device fabrication. In particular embodiments, the silicon-based electrical conductor can be a p-type silicon germanium compound, that is activated upon deposition at temperatures compatible with CMOS device fabrication.

主权项

1. A method comprising:
providing a substrate for an electronic memory; forming a seed layer comprising a seed layer material over the substrate; forming a conductive silicon and germanium containing material over the seed layer using a silicon and germanium containing precursor and p-type dopant at a deposition temperature lower than about 450 degrees Celsius, wherein the seed layer material facilitates crystallization of the conductive silicon and germanium containing material; and wherein the p-type dopant is activated within the conductive silicon and germanium containing material concurrent with the forming the conductive silicon and germanium containing material.