发明名称 |
METHOD FOR FORMING AMORPHOUS SILICON FILM, AND FILM FORMING APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming an amorphous silicon film which has a flatter and smoother surface and enables the achievement of a thinner film.SOLUTION: A method for forming an amorphous silicon film comprises the steps of: causing the surface of the base 2 to adsorb the organic silicon compound having a bond of a silicon atom and a nitrogen atom by heating a base 2, and supplying the heated base 2 with gas including an organic silicon compound having a bond of a silicon atom and a nitrogen atom; forming an amorphous silicon film 4 on the base 2 with the organic silicon compound adsorbed thereon by heating the base 2, and supplying the heated base 2 with the organic silicon compound adsorbed thereon with a silane-based gas including no amino group; and reducing the amorphous silicon film 4 in film thickness by etching the amorphous silicon film 4. |
申请公布号 |
JP2015146430(A) |
申请公布日期 |
2015.08.13 |
申请号 |
JP20150042007 |
申请日期 |
2015.03.04 |
申请人 |
TOKYO ELECTRON LTD |
发明人 |
KAKIMOTO AKINOBU;TAKAGI SATOSHI;IGARASHI KAZUMASA |
分类号 |
H01L21/205;H01L21/28;H01L21/285 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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