发明名称 METHOD FOR FORMING AMORPHOUS SILICON FILM, AND FILM FORMING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a method for forming an amorphous silicon film which has a flatter and smoother surface and enables the achievement of a thinner film.SOLUTION: A method for forming an amorphous silicon film comprises the steps of: causing the surface of the base 2 to adsorb the organic silicon compound having a bond of a silicon atom and a nitrogen atom by heating a base 2, and supplying the heated base 2 with gas including an organic silicon compound having a bond of a silicon atom and a nitrogen atom; forming an amorphous silicon film 4 on the base 2 with the organic silicon compound adsorbed thereon by heating the base 2, and supplying the heated base 2 with the organic silicon compound adsorbed thereon with a silane-based gas including no amino group; and reducing the amorphous silicon film 4 in film thickness by etching the amorphous silicon film 4.
申请公布号 JP2015146430(A) 申请公布日期 2015.08.13
申请号 JP20150042007 申请日期 2015.03.04
申请人 TOKYO ELECTRON LTD 发明人 KAKIMOTO AKINOBU;TAKAGI SATOSHI;IGARASHI KAZUMASA
分类号 H01L21/205;H01L21/28;H01L21/285 主分类号 H01L21/205
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