| 摘要 |
PROBLEM TO BE SOLVED: To provide a structure for preventing mutual reaction of a material used in an oxide semiconductor layer and a material used in a source electrode layer or a drain electrode layer, in a thin film transistor using the oxide semiconductor layer.SOLUTION: A source electrode layer or a drain electrode layer provided on a substrate having an insulating surface has a lamination structure of more than one layers, and one layer of the lamination in contact with an oxide semiconductor layer is a metal layer of an element other than the constituent metal elements of the oxide semiconductor layer. An element selected from Sn, Sb, Se, Te, Pd, Ag, Ni, Cu, an alloy of the element described above, or an alloy combining the elements described above is used as a material of the metal layer. |
