MANUFACTURABLE MULTI-EMITTER LASER DIODE

摘要

A method for manufacturing a multi-emitter laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.

主权项

1. A method for manufacturing a multi-emitter laser device, the method comprising:
providing a substrate having a surface region; forming an epitaxial material overlying the surface region, the epitaxial material comprising a release material region, an n-type cladding region overlying the release material region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region; and an interface region overlying the epitaxial material; forming a plurality of dice by at least patterning the epitaxial material and defining a mesa region to form a plurality of epitaxial mesa dice regions, each pair of epitaxial mesa dice being characterized by a first pitch between the pair of dice, each of the dice corresponding to at least one laser diode stripe region; subjecting the release material to an energy source to fully or partially remove the release material; bonding the interface region associated with at least one of the plurality of epitaxial mesa dice regions to a carrier wafer to form a bonded structure wherein at least a pair of the transferred epitaxial mesa dice are arranged in a substantially parallel configuration on the carrier wafer with a lateral spacing defined by a second pitch; initiating the release of the gallium and nitrogen containing substrate member to complete the transfer process of the one or more plurality of epitaxial mesa dice regions to the carrier wafer at the second pitch; processing the plurality of epitaxial mesa dice regions on the carrier wafer to form a plurality of laser stripe regions within the epitaxial mesa dice regions; processing the carrier wafer with the plurality of epitaxial dice regions comprising laser stripe regions to form a plurality of laser diode die regions configured as a multi-emitter laser diode region having a multi-emitter laser diode device; wherein at least a pair of laser diode regions provided in the multi-emitter laser diode die region is spaced by a third pitch in between the pair of the laser diode regions provided in the multi-emitter laser diode region; and singulating each of the laser diode regions in the multi-emitter laser diode region from the carrier wafer to form individual laser diode devices.