| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a reflective mask for EUVL capable of minimizing displacement of a mask pattern due to temperature difference during electron beam lithography to a resist film and during execution of EUVL, and to provide a manufacturing method of a mask blank. <P>SOLUTION: In the manufacturing method of a reflective mask blank for EUV lithography (EUVL) in which at least a reflective layer 2 reflecting the EUV light beam, and an absorption layer 3 absorbing the EUV light beam are formed on the deposition surface of a glass substrate 1 in this order, a silica glass substrate containing TiO<SB POS="POST">2</SB>satisfying the following formulae (1), (2) is selected as the glass substrate. T<SB POS="POST">exp</SB>-k<SB POS="POST">1</SB>/(dα/dT)≤T<SB POS="POST">0</SB>(1),(α<SB POS="POST">pat</SB>×T<SB POS="POST">pat</SB>-α<SB POS="POST">exp</SB>×T<SB POS="POST">exp</SB>+k<SB POS="POST">2</SB>)/(α<SB POS="POST">pat</SB>-α<SB POS="POST">exp</SB>)≤T<SB POS="POST">0</SB>≤(α<SB POS="POST">pat</SB>×T<SB POS="POST">pat</SB>-α<SB POS="POST">exp</SB>×T<SB POS="POST">exp</SB>-k<SB POS="POST">2</SB>)/(α<SB POS="POST">pat</SB>-α<SB POS="POST">exp</SB>)(2). <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
