METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device includes the steps of: preparing a substrate (30) made of silicon carbide; forming, in the substrate (30), a trench (15) opened on one main surface (30A) side of the substrate (30); and forming an oxide film (40) in a region including a surface of the trench (15). In the step of forming the oxide film (40), the substrate (30) is heated at a temperature of not less than 1250°C in an atmosphere containing oxygen.