发明名称 |
SELF-ALIGNED METHOD OF FORMING A SEMICONDUCTOR MEMORY ARRAY OF FLOATING GATE MEMORY CELLS WITH SINGLE POLY LAYER |
摘要 |
A method of forming a semiconductor memory cell that includes forming the floating and control gates from the same poly layer. Layers of insulation, conductive and second insulation material are formed over a substrate. A trench is formed in the second insulation material extending down to and exposing the conductive layer. Spacers are formed in the trench, separated by a small and defined gap at a bottom of the trench that exposes a portion of the conductive layer. A trench is then formed through the exposed portion of the conductive layer by performing an anisotropic etch through the gap. The trench is filled with third insulation material. Selected portions of the conductive layer are removed, leaving two blocks thereof separated by the third insulation material. |
申请公布号 |
EP2904631(A1) |
申请公布日期 |
2015.08.12 |
申请号 |
EP20130840895 |
申请日期 |
2013.07.31 |
申请人 |
SILICON STORAGE TECHNOLOGY INC. |
发明人 |
DO, NHAN;TIWARI, VIPIN;TRAN, HIEU, VAN;LIU, XIAN |
分类号 |
H01L29/423;H01L29/08;H01L29/66;H01L29/788 |
主分类号 |
H01L29/423 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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