| 摘要 |
The present disclosure concerns a method for writing a MRAM device, comprising magnetic tunnel junction (2) with a storage layer (23), a sense layer (21), and a spacer layer (22) between the storage and sense layers (23, 21); at least one of the storage and sense layers (23, 21) having a magnetic anisotropy axis (200); the method comprising an initialization step including: applying an initial heating current pulse (31') for heating the magnetic tunnel junction (2) to a temperature above a threshold temperature at which a storage magnetization is freely orientable, providing an initial resultant magnetic field (60') for adjusting the storage magnetization (230) in an initial direction oriented along the magnetic anisotropy axis (200). The method allows performing the writing step with improved reproducibly. |
