| 摘要 |
In a method for operating a nonvolatile memory device according to the present invention which includes a plurality of memory cells which include a plurality of cell strings which are stacked in the vertical direction of the substrate, respectively, a ground selection transistor which is provided between the memory cells and the substrate, and a string selection transistor which is provided between the memory cells and the bit line, the method for operating the nonvolatile memory device according to the present invention includes the steps of: determining the position of the selected word line among the word lines connected to the memory cells; selecting at least one among read disturbance prevention modes according to the position of the selected word line; and performing a reading operation or a verifying operation according to at least one of the selected reading disturbance prevention modes. |
