发明名称 変調回路及びそれを備えた半導体装置
摘要 A modulation circuit includes a load and a transistor serving as a switch. The transistor has an oxide semiconductor layer in which hydrogen concentration is 5×1019/cm3 or less. The off-state current of the transistor is 1×10−13 A or less. A modulation circuit includes a load, a transistor serving as a switch, and a diode. The load, the transistor, and the diode are connected in series between the terminals of an antenna. The transistor has an oxide semiconductor layer in which hydrogen concentration is 5×1019/cm3 or less. An off-state current of the transistor is 1×10−13 A or less. On/off of the transistor is controlled in accordance with a signal inputted to a gate of the transistor. The load is a resistor, a capacitor, or a combination of a resistor and a capacitor.
申请公布号 JP5762723(B2) 申请公布日期 2015.08.12
申请号 JP20100255066 申请日期 2010.11.15
申请人 株式会社半導体エネルギー研究所 发明人 鎌田 康一郎
分类号 H03C1/36;G06K19/00;H01L29/786 主分类号 H03C1/36
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