| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device in which device information on its own semiconductor storage device can be properly stored. <P>SOLUTION: A manufacturing history storage space 44, which is constituted by ferroelectric memories provided in an area where a status register 42 on a specific word line (1024th word line) is not provided and 8th to 255th bit lines are crossed, stores information on manufacturing history of a semiconductor storage device 10 (semiconductor chip 20). For storage and reference to the manufacturing history storage space 44, special commands, which are different from normal commands used for storage and reference to a main storage space 40, are used. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
