发明名称 Organic light-emitting display device and method of manufacturing the same
摘要 An organic light-emitting display device may include a plurality of scan lines, a plurality of data lines, and a plurality of pixels located at an intersection region of the scan line and the data line, wherein the organic light-emitting display device includes a thin film transistor including a gate electrode on a different layer than a scan line, an active layer on the gate electrode, and source and drain electrodes that are in contact with source and drain regions of the active layer, and a capacitor including a first capacitor electrode on the same layer as the scan line, a second capacitor electrode on the gate electrode, and a third electrode on the same layer as the source and drain electrodes.
申请公布号 US9105864(B2) 申请公布日期 2015.08.11
申请号 US201313833818 申请日期 2013.03.15
申请人 SAMSUNG DISPLAY CO., LTD. 发明人 Choi Chaun-Gi
分类号 H01G4/33;H01G4/08;H01L51/52;H01L27/12;H01L27/32 主分类号 H01G4/33
代理机构 Lee & Morse, P.C. 代理人 Lee & Morse, P.C.
主权项 1. An organic light-emitting display device including a plurality of scan lines and a plurality of data lines, and a plurality of pixels each located at an intersection region of the scan line and the data line, wherein the organic light-emitting display device comprises: a thin film transistor including a gate electrode on a different layer than a scan line, an active layer on the gate electrode, and source and drain electrodes in contact with source and drain regions of the active layer; and a capacitor including: a first capacitor electrode on a same layer as the scan line, the first capacitor electrode below both the gate electrode and the active layer,a second capacitor electrode overlapping and on the first capacitor electrode,a first insulating layer between the first capacitor electrode and the second capacitor electrode, the gate electrode and the second capacitor electrode on the first insulating layer,a third capacitor electrode on a same layer as the source and drain electrodes,a second insulating layer on the gate electrode and the second capacitor electrode and between the second capacitor electrode and the third capacitor electrode, anda third insulating layer between the second capacitor electrode and the third capacitor electrode.
地址 Yongin, Gyunggi-Do KR