| 发明名称 | Memory devices and methods of operating the same | ||
| 摘要 | The present disclosure includes memory devices and methods of operating the same. One such device includes an array of groups of memory cells, a group selector configured to select a particular group of memory cells from within the array, and a cell selector configured to select a particular memory cell from within the selected particular group of memory cells. | ||
| 申请公布号 | US9105320(B2) | 申请公布日期 | 2015.08.11 |
| 申请号 | US201314055643 | 申请日期 | 2013.10.16 |
| 申请人 | Micron Technology, Inc. | 发明人 | Schubert Martin F.;Sills Scott E. |
| 分类号 | G11C8/02;G11C8/12 | 主分类号 | G11C8/02 |
| 代理机构 | Brooks, Cameron & Huebsch, PLLC | 代理人 | Brooks, Cameron & Huebsch, PLLC |
| 主权项 | 1. A device, comprising: an array of groups of memory cells; a group selector configured to select a particular group of memory cells from within the array, wherein remaining groups of memory cells within the array include partially-selected memory cells and suppressed non-selected memory cells; and a cell selector configured to select a particular memory cell from within the selected particular group of memory cells. | ||
| 地址 | Boise ID US | ||