发明名称 Stretchable form of single crystal silicon for high performance electronics on rubber substrates
摘要 The present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits of the present invention preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention may be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.
申请公布号 US9105555(B2) 申请公布日期 2015.08.11
申请号 US201414220923 申请日期 2014.03.20
申请人 The Board of Trustees of the University of Illinois 发明人 Rogers John A.;Khang Dahl-Young;Sun Yugang;Menard Etienne
分类号 H01L29/72;H01L29/15;B82Y10/00;H01L21/02;H01L21/683;H01L27/12;H01L29/06;H01L29/16;H01L29/778;H01L29/786;H01L31/0392;H01L31/18;H05K1/02;H01L23/29;H01L23/00 主分类号 H01L29/72
代理机构 Lathrop & Gage LLP 代理人 Lathrop & Gage LLP
主权项 1. A stretchable electronic circuit comprising: a flexible substrate; an electronic circuit comprising at least one stretchable semiconductor structure, the electronic circuit being supported by the surface of the flexible substrate; and an encapsulating layer or coating, the encapsulating layer or coating comprising an additive, the additive comprising at least one of a fiber, paper, foil, a structural enhancer or a filler; wherein the encapsulating layer or coating at least partially encapsulates the at least one stretchable semiconductor structure; wherein the at least partially embedded portion of the electronic circuit comprises the at least one stretchable semiconductor structure; wherein the at least one stretchable semiconductor structure has a curved internal surface that provides stretchability to isolate the electronic circuit from an applied strain; and wherein the encapsulating layer or coating modifies the range of stretchability of the at least one stretchable semiconductor structure.
地址 Urbana IL US