发明名称 |
Double sidewall image transfer process |
摘要 |
Methodology enabling a generation of fins having a variable fin pitch less than 40 nm, and the resulting device are disclosed. Embodiments include: forming a hardmask on a substrate; providing first and second mandrels on the hardmask; providing a first spacer on each side of each of the first and second mandrels; removing the first and second mandrels; providing, after removal of the first and second mandrels, a second spacer on each side of each of the first spacers; and removing the first spacers. |
申请公布号 |
US9105510(B2) |
申请公布日期 |
2015.08.11 |
申请号 |
US201414461745 |
申请日期 |
2014.08.18 |
申请人 |
GLOBALFOUNDRIES Inc. |
发明人 |
Woo Youngtag;Kye Jongwook;Somasekhar Dinesh |
分类号 |
H01L21/8234;H01L27/11;H01L21/308;H01L27/088;H01L21/8238 |
主分类号 |
H01L21/8234 |
代理机构 |
Ditthavong & Steiner, P.C. |
代理人 |
Ditthavong & Steiner, P.C. |
主权项 |
1. A device comprising:
a substrate; a first fin in the substrate; a second fin in the substrate being separated from the first fin by a first distance; a third fin in the substrate being separated from the second fin by a second distance, and being separated from the first fin by the second fin, wherein the first and second distances are different; and a fourth fin in the substrate separated from the third fin by the first distance, the fourth fin being separated from the second fin by the third fin, wherein the fins have a variable fin pitch less than 40 nm. |
地址 |
Grand Cayman KY |