Method for fabricating semiconductor device

摘要

A method for making a semiconductor device includes forming a trench in a first layer on a substrate. A conductive layer having a pattern is formed in the trench. A first metal gate electrode is formed on the conductive layer, and a second metal gate electrode is formed on the first metal gate electrode. The first and second metal gate electrodes at least partially conform to the pattern of the conductive layer. Widths of first surfaces of the first and second metal gate electrodes are different from respective widths of second surfaces of the first and second metal gate electrodes as a result of the pattern.

主权项

1. A method for fabricating a semiconductor device, the method comprising:
forming an interlayer insulating layer on a substrate, the interlayer insulating layer including a first trench; forming a first conductive layer along side and bottom surfaces of the first trench; forming a first pre-mask pattern on the first conductive layer, the first pre-mask pattern filling a part of the first trench; changing the first pre-mask pattern into a first mask pattern through a first bake process; and removing the first conductive layer exposed by the first mask pattern to form a first conductive layer pattern.