发明名称 Profile control in interconnect structures
摘要 The profile of a via can be controlled by forming a profile control liner within each via opening that is formed into a dielectric material prior to forming a line opening within the dielectric material. The presence of the profile control liner within each via opening during the formation of the line opening prevents rounding of the corners of a dielectric material portion that is present beneath the line opening and adjacent the via opening.
申请公布号 US9105641(B2) 申请公布日期 2015.08.11
申请号 US201414486493 申请日期 2014.09.15
申请人 International Business Machines Corporation 发明人 Chen Shyng-Tsong;Choi Samuel S.;Holmes Steven J.;Horak David V.;Koburger, III Charles W.;Li Wai-Kin;Penny Christopher J.;Ponoth Shom;Yang Chih-Chao;Yin Yunpeng
分类号 H01L23/12;H01L21/4763;H01L23/532;H01L23/48;H01L21/768;H01L23/522;H01L23/528 主分类号 H01L23/12
代理机构 Scully, Scott, Murphy & Presser, P.C. 代理人 Scully, Scott, Murphy & Presser, P.C. ;Ivers, Esq. Catherine
主权项 1. An interconnect structure comprising: a dielectric material comprising a via opening and a line opening, wherein said line opening is located above and connected to said via opening; a profile control liner present at least partially on sidewalls of said dielectric material within said via opening; a diffusion barrier liner located within said via opening and said line opening; and a conductive material located within remaining portions of said via opening and said line opening, wherein a portion of said conductive material within at least one portion of said via opening is separated from said dielectric material by a portion of said profile control liner and a portion of said diffusion barrier liner, and wherein another portion of said conductive material within a lower portion of said via opening is separated from said dielectric material by only another portion of said diffusion barrier liner.
地址 Armonk NY US