发明名称 |
Profile control in interconnect structures |
摘要 |
The profile of a via can be controlled by forming a profile control liner within each via opening that is formed into a dielectric material prior to forming a line opening within the dielectric material. The presence of the profile control liner within each via opening during the formation of the line opening prevents rounding of the corners of a dielectric material portion that is present beneath the line opening and adjacent the via opening. |
申请公布号 |
US9105641(B2) |
申请公布日期 |
2015.08.11 |
申请号 |
US201414486493 |
申请日期 |
2014.09.15 |
申请人 |
International Business Machines Corporation |
发明人 |
Chen Shyng-Tsong;Choi Samuel S.;Holmes Steven J.;Horak David V.;Koburger, III Charles W.;Li Wai-Kin;Penny Christopher J.;Ponoth Shom;Yang Chih-Chao;Yin Yunpeng |
分类号 |
H01L23/12;H01L21/4763;H01L23/532;H01L23/48;H01L21/768;H01L23/522;H01L23/528 |
主分类号 |
H01L23/12 |
代理机构 |
Scully, Scott, Murphy & Presser, P.C. |
代理人 |
Scully, Scott, Murphy & Presser, P.C. ;Ivers, Esq. Catherine |
主权项 |
1. An interconnect structure comprising:
a dielectric material comprising a via opening and a line opening, wherein said line opening is located above and connected to said via opening; a profile control liner present at least partially on sidewalls of said dielectric material within said via opening; a diffusion barrier liner located within said via opening and said line opening; and a conductive material located within remaining portions of said via opening and said line opening, wherein a portion of said conductive material within at least one portion of said via opening is separated from said dielectric material by a portion of said profile control liner and a portion of said diffusion barrier liner, and wherein another portion of said conductive material within a lower portion of said via opening is separated from said dielectric material by only another portion of said diffusion barrier liner. |
地址 |
Armonk NY US |