发明名称 Voids in interconnect structures and methods for forming the same
摘要 A device includes a dielectric layer, a passive device including a portion in the dielectric layer, and a plurality of voids in the dielectric layer and encircling the passive device.
申请公布号 US9105634(B2) 申请公布日期 2015.08.11
申请号 US201213539121 申请日期 2012.06.29
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Huang Jiun-Jie;Wang Ling-Sung
分类号 H01L21/4763;H01L23/522;H01L23/532;H01L21/768;H01L49/02 主分类号 H01L21/4763
代理机构 Slater & Matsil, L.L.P. 代理人 Slater & Matsil, L.L.P.
主权项 1. A device comprising: a dielectric layer; a passive device comprising a portion in the dielectric layer, wherein the passive device comprises a Metal-Oxide-Metal (MOM) capacitor, a resistor, an inductor, a transformer, a balun, a micro-stripe, or a co-planar waveguide; a plurality of voids in the dielectric layer and encircling the passive device; a plurality of low-k dielectric layers overlying the dielectric layer; and a non-low-k dielectric layer over the plurality of low-k dielectric layers, wherein additional voids are formed in the plurality of low-k dielectric layers and surrounding the passive device.
地址 Hsin-Chu TW