发明名称 |
Voids in interconnect structures and methods for forming the same |
摘要 |
A device includes a dielectric layer, a passive device including a portion in the dielectric layer, and a plurality of voids in the dielectric layer and encircling the passive device. |
申请公布号 |
US9105634(B2) |
申请公布日期 |
2015.08.11 |
申请号 |
US201213539121 |
申请日期 |
2012.06.29 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Huang Jiun-Jie;Wang Ling-Sung |
分类号 |
H01L21/4763;H01L23/522;H01L23/532;H01L21/768;H01L49/02 |
主分类号 |
H01L21/4763 |
代理机构 |
Slater & Matsil, L.L.P. |
代理人 |
Slater & Matsil, L.L.P. |
主权项 |
1. A device comprising:
a dielectric layer; a passive device comprising a portion in the dielectric layer, wherein the passive device comprises a Metal-Oxide-Metal (MOM) capacitor, a resistor, an inductor, a transformer, a balun, a micro-stripe, or a co-planar waveguide; a plurality of voids in the dielectric layer and encircling the passive device; a plurality of low-k dielectric layers overlying the dielectric layer; and a non-low-k dielectric layer over the plurality of low-k dielectric layers, wherein additional voids are formed in the plurality of low-k dielectric layers and surrounding the passive device. |
地址 |
Hsin-Chu TW |